BTB04S
FEATURES
- With TO-220AB non insulated package
- Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a)
RMS on-state current (full sine wave)Tj=95℃ Non-repetitive peak on-state current tp=10ms Operating junction temperature Storage temperature Thermal resistance, junction to case Thermal resistance, junction to ambient
MIN UNIT
4A 40 A 110 ℃ -45~150 ℃ 3.2 ℃/W 60 ℃/W
SYMBOL
PARAMETER
VDRM VRRM
Repetitive peak off-state voltage Repetitive peak reverse voltage
400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT 400 600 700 V 400 600 700 V
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM IDRM
Repetitive peak reverse current Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110℃
VD=VDRM,
VD=VDRM, Tj=110℃
Gate trigger current
Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω
T...
