BUL128DB Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Low Collector Saturation Voltage : VCE(sat) = 0.

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Datasheet Specifications

Part number: BUL128DB
Manufacturer: Inchange Semiconductor
File Size: 157.64 KB
Datasheet: BUL128DB-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Curren

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BUL128DB Silicon NPN Power Transistor Inchange Semiconductor

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