Datasheet Details
| Part number | BUR54 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 149.77 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 BUR54 Datasheet
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| Part number | BUR54 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 149.77 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
BUR54 Datasheet
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Current Capability ·Low Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 20A APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 10 A 350 W 200 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR54 E
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part Number | Description |
|---|---|
| BUR52 | Silicon NPN Power Transistor |