BUS133H Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUS133H .
High Switching Speed. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS. Designed for use in very fast switching.

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Datasheet Specifications

Part number: BUS133H
Manufacturer: Inchange Semiconductor
File Size: 188.30 KB
Datasheet: BUS133H-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous

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BUS133H Silicon NPN Power Transistor Inchange Semiconductor

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