BUW12F Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min. Low Collector Saturation Voltage- : VCE(sat)= 1. High Spee.

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Datasheet Specifications

Part number: BUW12F
Manufacturer: Inchange Semiconductor
File Size: 216.20 KB
Datasheet: BUW12F-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high voltage, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Col

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BUW12F Silicon NPN Power Transistor Inchange Semiconductor

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