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BUX11N Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor BUX11N .
Low Collector Saturation Voltage. High Switching Speed. High Current Current Capability. Minimum Lot-to-Lot variations for robust dev.

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Datasheet Specifications

Part number
BUX11N
Manufacturer
Inchange Semiconductor
File Size
206.15 KB
Datasheet
BUX11N-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Motor control
* Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Coll

BUX11N Distributors

📁 Related Datasheet

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  • BUX10X - NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)
  • BUX12 - NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)
  • BUX13 - Bipolar NPN Device (Seme LAB)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUX11N-like datasheet