C2026
DESCRIPTION
- Low Noise
NF= 3.0d B TYP. @ f= 500MHz
- High Power Gain
Gpe= 15d B TYP. @ f= 500MHz
- High Gain Bandwidth Product f T= 2.0GHz TYP.
APPLICATIONS
- Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
..
50 m A
℃
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification
2SC2026
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
