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Inchange Semiconductor
C4007
C4007 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) - Wide Area of Safe Operation - plement to Type 2SA1634 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 40 W ℃ Tstg Storage Temperature...