D103 Overview
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ plement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
| Part number | D103 |
|---|---|
| Datasheet | D103_InchangeSemiconductor.pdf |
| File Size | 195.51 KB |
| Manufacturer | Inchange Semiconductor |
| Description | 2SD103 |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ plement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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D1030UK | METAL GATE RF SILICON FET | Seme LAB |
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D1031 | METAL GATE RF SILICON FET | Seme LAB |
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D1031SH | Fast Hard Drive Diode | Infineon |
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D1031UK | METAL GATE RF SILICON FET | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
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