D1670
Inchange Semiconductor
247.30kb
2sd1670. *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High DC Current Gain: hFE= 1000( Min.) @ IC= 10A *Low Collector Saturation
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D16-4148 - Switching Diode Array
(Microsemi Corporation)
8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax (480) 947-1503
D16-4148
and
D16-4150
Switching Diode Array
FEATURES
• 8 Diode Array.
D16-4150 - Switching Diode Array
(Microsemi Corporation)
8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax (480) 947-1503
D16-4148
and
D16-4150
Switching Diode Array
FEATURES
• 8 Diode Array.
D16000W - Standard Recovery Diode
(nELL)
SEMICONDUCTOR
RRooHHSS
.
D1600C - Standard Recovery Diode
(nELL)
SEMICONDUCTOR
D1600C Series RRooHHSS
Nell High Power Products
Standard Recovery Diodes (Hockey PUK Version), 1600A
FEATURES
Wide current range High .
D1600U - Fast Hard Drive Diode
(Infineon)
Schnelle beschaltungslose Diode Fast Hard Drive Diode
Technische Information / technical information
D1600U
Key Parameters VRRM IFAVM IFSM VT0 rT Rt.
D1609 - 2SD1609
(Hitachi Semiconductor)
.DataSheet.co.kr
2SD1609, 2SD1610
..
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier plementary pair .
D1610 - 2SD1610
(Hitachi Semiconductor)
2SD1609, 2SD1610
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier plementary pair with 2SB1109 and 2SB1110
Outline
TO-126 MO.
D1615 - 2SD1615
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
DESCRIPTION 2SD1615, 1615A are designed for audio.
D1615A - 2SD1615A
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
DESCRIPTION 2SD1615, 1615A are designed for audio.
D1616 - 2SD1616
(ETC)
..
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier *M.
