D209L Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. High Reliability isc Product Specification D209L.

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Datasheet Specifications

Part number: D209L
Manufacturer: Inchange Semiconductor
File Size: 198.23 KB
Datasheet: D209L-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC

D209L Distributors

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D209L Silicon NPN Power Transistor Inchange Semiconductor

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