D363 Datasheet - Inchange Semiconductor

D363, 2SD363

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min). Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS. Designed for.

datasheet Preview Page 1 from Datasheet4u.com

D363-InchangeSemiconductor.pdf

D363 Datasheet Preview — Preview of D363 PDF

Datasheet Details

Part number:

D363

Manufacturer:

Inchange Semiconductor

File Size:

116.85 KB

Description:

2SD363

Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipa

D363 Distributors

📁 Related Datasheet

D360SC4M D360SC6M D362 D36NH02L D36V0S1U2LP1610Q

📌 All Tags

D363 2SD363 Inchange Semiconductor

Inchange Semiconductor D363-like datasheet