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DSSK60-0045A - Schottky Barrier Rectifier

Features

  • Multilayer Metal -Silicon Potential Structure.
  • Low Leakage Current.
  • High Current Capability, High Efficiency.
  • High Junction Temperature Capability.
  • RoHs Product.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – DSSK60-0045A

Datasheet Details

Part number DSSK60-0045A
Manufacturer Inchange Semiconductor
File Size 242.87 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet DSSK60-0045A Datasheet
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Schottky Barrier Rectifier DSSK60-0045A FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability ·RoHs Product. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply. ·Low Voltage High Frequency Invers Circuit. ·Low Voltage Continued Circuit and Protection Circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Nonrepetitive Peak Surge Current 8.
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