Datasheet4U Logo Datasheet4U.com

IRF120 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=8A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies Motor controls,Inverters and Choppers Audio amplifiers and high energy puls

📥 Download Datasheet

Datasheet preview – IRF120

Datasheet Details

Part number IRF120
Manufacturer Inchange Semiconductor
File Size 42.49 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRF120 Datasheet
Additional preview pages of the IRF120 datasheet.

📁 Similar Datasheet

  • IRF120 - N-CHANNEL POWER MOSFET (Samsung semiconductor)
  • IRF120 - Power MOSFET (Intersil Corporation)
  • IRF120 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF1205 - HEXFET Power MOSFET (International Rectifier)
  • IRF121 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF121 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF121 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF122 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF122 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF122 - N-Channel Power MOSFET (Intersil Corporation)
Other Datasheets by Inchange Semiconductor
  • IRF121 - N-Channel MOSFET Transistor
  • IRF122 - N-Channel MOSFET Transistor
  • IRF123 - N-Channel MOSFET Transistor
  • IRF130 - N-Channel MOSFET Transistor
  • IRF132 - N-Channel MOSFET Transistor
  • IRF133 - N-Channel MOSFET Transistor
  • IRF140 - N-Channel MOSFET Transistor
  • IRF1404 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF120 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 100 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 40 W Max.
Published: |