IRFS350A - N-Channel MOSFET Transistor

Inchange Semiconductor

IRFS350A Datasheet Preview — Preview of IRFS350A PDF

Datasheet Details

Part number	IRFS350A
Manufacturer	Inchange Semiconductor
File Size	58.88 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFS350A-InchangeSemiconductor.pdf

IRFS350A Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±30 V V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 92 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Re

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.

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Published: Aug 8, 2016 |