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KSD5007 - Silicon NPN Power Transistor

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Datasheet Details

Part number KSD5007
Manufacturer Inchange Semiconductor
File Size 122.76 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5007-InchangeSemiconductor.pdf

KSD5007 Product details

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current- Continuous 6 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 120 W 150 ℃

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