Datasheet Details
| Part number | KSD526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.47 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 KSD526 Datasheet
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| Part number | KSD526 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 137.47 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
KSD526 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ Complement to Type KSB596 APPLICATIONS Designed for power amplifier applications. Recommended for 20~25W high fidelity audio frequency amplifier output stage applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Col
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