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KSD526 Silicon NPN Power Transistor

KSD526 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃.

KSD526 Applications

* Designed for power amplifier applications.
* Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage

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Datasheet Details

Part number
KSD526
Manufacturer
Inchange Semiconductor
File Size
137.47 KB
Datasheet
KSD526-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor KSD526-like datasheet