KSD560 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 3. Low Saturation Voltage.

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Datasheet Specifications

Part number: KSD560
Manufacturer: Inchange Semiconductor
File Size: 190.92 KB
Datasheet: KSD560-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collect

KSD560 Distributors

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KSD560 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor KSD560-like datasheet