Datasheet4U Logo Datasheet4U.com

KSD560 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of KSD560 PDF
datasheet Preview Page 2

Datasheet Details

Part number KSD560
Manufacturer Inchange Semiconductor
File Size 190.92 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD560-InchangeSemiconductor.pdf

KSD560 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 3.0A Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100

📁 KSD560 Similar Datasheet

  • KSD5004 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5005 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5007 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5011 - NPN Transistor (Samsung semiconductor)
  • KSD5013 - NPN Transistor (Samsung semiconductor)
  • KSD5015 - NPN Transistor (Samsung semiconductor)
  • KSD5017 - NPN Transistor (Samsung semiconductor)
  • KSD5018 - NPN Transistor (Fairchild Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |