Datasheet4U Logo Datasheet4U.com

KTA1700 Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type KTC2800 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature -1.0 A 1.5 W 10 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1700 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;

IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;

KTA1700 Distributor & Price

Compare KTA1700 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.