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KTA1700 - Silicon PNP Power Transistors

Description

High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) Complement to Type KTC2800 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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Datasheet Details

Part number KTA1700
Manufacturer Inchange Semiconductor
File Size 214.87 KB
Description Silicon PNP Power Transistors
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type KTC2800 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature -1.0 A 1.5 W 10 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1700 isc website： www.iscsemi.
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