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KTA1700 Silicon PNP Power Transistors

KTA1700 Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage VCEO= -160V(Min). Complement to Type KTC2800. Minimum Lot-to-Lot variations for robust device pe.

KTA1700 Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

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Datasheet Details

Part number
KTA1700
Manufacturer
Inchange Semiconductor
File Size
214.87 KB
Datasheet
KTA1700-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor KTA1700-like datasheet