MBR2030
FEATURES
- Metal silicon junction，majority carrier conduction
- Low Power Loss/High Efficiency
- High current capability，low forward voltage drop
- High surge capability
- Guardring for overvoltage protection
- High temperature soldering guaranteed
- Ro HS product
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
A wave, single phase, 60Hz)
IRRM
Peak Repetitive Reverse Surge Current (20μs, 1.0k Hz)
Junction Temperature
-40~150 ℃
Tstg
Storage Temperature Range
-40~175 ℃ dv/dt Voltage Rate of Change...
