Datasheet4U Logo Datasheet4U.com

MBRF20150CT - Schottky Barrier Rectifier

MBRF20150CT Description

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBRF20150 .

MBRF20150CT Features

* Low power loss, high efficiency.
* Multilayer Metal -Silicon Potential Structure.
* Beautiful High Temperature Character.
* Have Over Voltage protect loop,high reliability. MECHANICAL CHARACTERISTICS
* Be optimized for ultra-low forward voltage drop to maximize efficiency in Power

MBRF20150CT Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 150 20 150

📥 Download Datasheet

Preview of MBRF20150CT PDF
datasheet Preview Page 2

📁 Related Datasheet

  • MBRF20150CT-Y - Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)
  • MBRF20150CA - Dual Common Anode Schottky Half Bridge Rectifiers (Thinki Semiconductor)
  • MBRF20150 - Isolated 20.0 AMPS. Schottky Barrier Rectifiers (Taiwan Semiconductor)
  • MBRF20100 - SWITCHMODE Schottky Power Rectifirers (Motorola)
  • MBRF20100CA - Dual Common Anode Schottky Half Bridge Rectifiers (Thinki Semiconductor)
  • MBRF20100CT - 20A High Power Schottky Barrier Rectifiers (CITC)
  • MBRF20100CT-E3 - Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • MBRF20100CT-T - Trench Schottky Rectifier (CITC)

📌 All Tags

Inchange Semiconductor MBRF20150CT-like datasheet