Datasheet4U Logo Datasheet4U.com

MJ431 - Silicon NPN Power Transistor

Description

Collector-Emitter Voltage- : VCEX = 400V(Min) DC Current Gain- : hFE= 15-35@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

regulators and switching circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJ431 10 Amp NPN Silicon Power Transistors Micro Commercial Components
MJ400 Bipolar NPN Device Seme LAB
MJ4030 Power Transistors Mospec
MJ4030 (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS Comset Semiconductors
MJ4030 Power Transistor Motorola

Other Datasheets by Inchange Semiconductor

Part Number Description
MJ4030 Silicon PNP Darlingtion Power Transistor
MJ4031 Silicon PNP Darlingtion Power Transistor
MJ4032 Silicon PNP Darlingtion Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor MJ431 DESCRIPTION ·Collector-Emitter Voltage- : VCEX = 400V(Min) ·DC Current Gain- : hFE= 15-35@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits.
Published: |