MJ431 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor MJ431 .
Collector-Emitter Voltage- : VCEX = 400V(Min). DC Current Gain- : hFE= 15-35@ IC= 2. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: MJ431
Manufacturer: Inchange Semiconductor
File Size: 205.27 KB
Datasheet: MJ431-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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MJ431 Silicon NPN Power Transistor Inchange Semiconductor

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