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MJ6308 Silicon NPN Power Transistor

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Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor .
700V Collector-Base Breakdown Capability. Excellent Dynamic Saturation Characteristics. Fast swithing. Low Saturation Voltage. Ad.

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Datasheet Specifications

Part number
MJ6308
Manufacturer
Inchange Semiconductor
File Size
110.81 KB
Datasheet
MJ6308_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VEBO IC IB B MJ6308 PARAMETER Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitt

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