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PMD1601K

Silicon NPN Darlingtion Power Transistor

PMD1601K General Description


*High DC current gain
*Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min)
*Complement to type PMD1701K APPLICATIONS
*Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Coll.

PMD1601K Datasheet (111.68 KB)

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Datasheet Details

Part number:

PMD1601K

Manufacturer:

Inchange Semiconductor

File Size:

111.68 KB

Description:

Silicon npn darlingtion power transistor.

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PMD1601K Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

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