PMD1601K Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor

Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K .
High DC current gain. Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min). Complement to type PMD1701K APPLICATIONS. Designed for.

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Datasheet Specifications

Part number: PMD1601K
Manufacturer: Inchange Semiconductor
File Size: 111.68 KB
Datasheet: PMD1601K_InchangeSemiconductor.pdf
Description: Silicon NPN Darlingtion Power Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current

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PMD1601K Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

Inchange Semiconductor PMD1601K-like datasheet