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PMD1601K Datasheet - Inchange Semiconductor

PMD1601K Silicon NPN Darlingtion Power Transistor

*High DC current gain *Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) *Complement to type PMD1701K APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Coll.

PMD1601K_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

PMD1601K

Manufacturer:

Inchange Semiconductor

File Size:

111.68 KB

Description:

Silicon npn darlingtion power transistor.

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PMD1601K PMD1601K Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

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