RSJ250P10 P-Channel MOSFET Transistor

Inchange Semiconductor

RSJ250P10 Description

isc P-Channel MOSFET Transistor RSJ250P10 *.

RSJ250P10 Features

* Drain Current
* ID= -25A@ TC=25℃
* Drain Source Voltage : VDSS= -100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be

RSJ250P10 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -25 A IDM Drain Current-Single Pulsed -50 A PD Total Dissipation @TC=25℃ 50 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number: RSJ250P10
Manufacturer: Inchange Semiconductor
File Size: 339.71 KB
Datasheet: RSJ250P10-InchangeSemiconductor.pdf
Description: P-Channel MOSFET Transistor

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P-Channel MOSFET Transistor Inchange Semiconductor

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