RSJ250P10 Datasheet - Inchange Semiconductor

RSJ250P10 P-Channel MOSFET Transistor

RSJ250P10 Features

* Drain Current

* ID= -25A@ TC=25℃

* Drain Source Voltage : VDSS= -100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Be

Datasheet Details

RSJ250P10

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P-channel mosfet transistor.

RSJ250P10 Distributor

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