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BFP183 - Low Noise Silicon Bipolar RF Transistor

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Part number BFP183
Manufacturer Infineon Technologies AG
File Size 536.08 KB
Description Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP183 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP183 Marking Pin Configuration RHs 1=C 2=E 3=B 4=E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 76 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 65 5 250 150 -55 ...
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