BFR360 Datasheet - Infineon Technologies AG

BFR360 NPN Silicon RF Transistor

BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 98°C Junction .

BFR360_InfineonTechnologiesAG.pdf