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BFS17P NPN Silicon RF Transistor

BFS17P Description

BFS17P NPN Silicon RF Transistor .

BFS17P Features

* Maximum collector-emitter voltage VCE0 = 15 V
* Maximum collector current IC = 25 mA
* Noise figure NF = 3.5 dB
* 3rd order output intercept point OIP3 = 21.5 dBm
* 1 dB output compression point P-1dB = 10 dBm
* Transition frequency fT = 1.4 GHz

BFS17P Applications

* For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
* For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking Pin Configuration BF

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NPN Silicon Transistor Infineon Technologies AG
Infineon Technologies AG BFS17P-like datasheet