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BFS17P - NPN Silicon RF Transistor

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Infineon Technologies AG

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BFS17P NPN Silicon RF Transistor by Infineon Technologies AG - Datasheet Preview — Datasheet preview – BFS17P

Datasheet Details

Part number	BFS17P
Manufacturer	Infineon Technologies AG
File Size	230.38 KB
Description	NPN Silicon RF Transistor
Datasheet	BFS17P Datasheet
Additional preview pages of the BFS17P datasheet.

Product details

Features

Maximum collector-emitter voltage VCE0 = 15 V.
Maximum collector current IC = 25 mA.
Noise figure NF = 3.5 dB.
3rd order output intercept point OIP3 = 21.5 dBm.
1 dB output compression point P-1dB = 10 dBm.
Transition frequency fT = 1.4 GHz.
Maximum total power dissipation Ptot = 280 mW.
Package: SOT23.
Pb-free (RoHS compliant) package Potential.

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Published: Mar 23, 2005 |