IPF06N03LA
Infineon ↗ Technologies AG
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Optimos 2 power-transistor. and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology
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IPF06N03LAG - Power Transistor
(Infineon)
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application
• N-channel, l.
IPF060N03LG - Power-Transistor
(Infineon Technologies)
Type
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1).
IPF067N20NM6 - MOSFET
(Infineon)
IPF067N20NM6
MOSFET
OptiMOSTM 6 Power-Transistor, 200 V
Features
• N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.
IPF009N04NF2S - MOSFET
(Infineon)
IPF009N04NF2S
MOSFET
StrongIRFETTM2 Power-Transistor
Features
• Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.
IPF014N08NF2S - MOSFET
(Infineon)
IPF014N08NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPF016N06NF2S - MOSFET
(Infineon)
IPF016N06NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-channel, normal level • 100% avalanch.
IPF017N08NF2S - MOSFET
(Infineon)
IPF017N08NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPF019N12NM6 - MOSFET
(Infineon)
IPF019N12NM6
MOSFET
OptiMOSTM 6 Power-Transistor, 120 V
Features
• N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.
IPF021N13NM6 - MOSFET
(Infineon)
IPF021N13NM6
MOSFET
OptiMOSTM 6 Power-Transistor, 135 V
Features
• N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.
IPF04N03LA - OptiMOS 2 Power-Transistor
(Infineon Technologies AG)
IPF04N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(o.