• Part: IPU05N03LA
  • Description: OptiMOS 2 Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 348.94 KB
Download IPU05N03LA Datasheet PDF
Infineon
IPU05N03LA
Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC for target application - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 5.1 50 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD05N03LA IPU05N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4144 Q67042-S4230 Marking 05N03LA 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 50 350 300 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T...