SGW25N120
Fast IGBT in NPT-technology
- 40% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; Ro HS pliant
- plete product spectrum and PSpice Models : http://.infineon./igbt/
PG-TO-247-3
Type SGW25N120
VCE 1200V
IC 25A
Eoff 2.9m J
Tj 150°C
Marking
Package
SGW25N120 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating...
