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SKB02N120 - IGBT

SKB02N120 Description

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time .

SKB02N120 Applications

* Complete product spectrum and PSpice Models : http://www. infineon. com/igbt/ C G E PG-TO-263-3-2 Type SKB02N120 VCE IC Eoff Tj Marking Package 1200V 2A 0.11mJ 150C K02N120 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulse

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IGBT Infineon Technologies AG
Infineon Technologies AG SKB02N120-like datasheet