IGP01N120H2
IGP01N120H2, IGD01N120H2
High Speed 2-Technology
- Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies 2 generation High Speed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A nd
IGB01N120H2
- P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
P-TO-252-3-1 (D-PAK) (TO-252AA)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type IGP01N120H2 IGB01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140k Hz TC = 100°C, f = 140k Hz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg...
