IPD70N10S3-12 Power Transistor

Infineon Technologies

Description

OptiMOS™-T Power-Transistor .

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Datasheet Specifications

Part number: IPD70N10S3-12
Manufacturer: Infineon ↗ Technologies
File Size: 890.64 KB
Datasheet: IPD70N10S3-12-InfineonTechnologies.pdf
Description: Power Transistor

Features

* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11

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IPD70N10S3-12 Power Transistor Infineon Technologies

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