IPD70N10S3-12 Datasheet - Infineon Technologies

IPD70N10S3-12 Power Transistor

IPD70N10S3-12 Features

* N-channel - Enhancement mode

* Automotive AEC Q101 qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

* RoHS compliant

* 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11

Datasheet Details

IPD70N10S3-12

Infineon ↗ Technologies

890.64 KB

Power transistor.

IPD70N10S3-12 Distributor

📁 Related Datasheet

IPD70N10S3L-12 Power-Transistor (Infineon Technologies)

IPD70N03S4L-04 Power-Transistor (Infineon Technologies)

IPD70N04S3-07 Power-Transistor (Infineon Technologies)

IPD70P04P4-09 Power-Transistor (Infineon Technologies)

IPD70P04P4L-08 Power-Transistor (Infineon Technologies)

IPD70R1K4CE MOSFET (Infineon)

IPD70R1K4CE N-Channel MOSFET (INCHANGE)

IPD70R1K4P7S MOSFET (Infineon)

TAGS