IPF12N03LBG Datasheet - Infineon Technologies

IPF12N03LBG Power-Transistor

Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Type IPD12N03LB G IPS12N03LB G IPF12N.

IPF12N03LBG Datasheet (455.90 KB)