IPG16N10S4-61 Power-Transistor

Infineon Technologies

Description

OptiMOS™-T2 Power-Transistor .

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Datasheet Specifications

Part number: IPG16N10S4-61
Manufacturer: Infineon ↗ Technologies
File Size: 253.56 KB
Datasheet: IPG16N10S4-61-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Dual N-channel Normal Level - Enhancement mode
* AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON

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IPG16N10S4-61 Power-Transistor Infineon Technologies

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