IPG16N10S4-61 Datasheet - Infineon Technologies

IPG16N10S4-61 Power-Transistor

IPG16N10S4-61 Features

* Dual N-channel Normal Level - Enhancement mode

* AEC Q101 qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

* RoHS compliant

* 100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON

Datasheet Details

IPG16N10S4-61

Infineon ↗ Technologies

253.56 KB

Power-transistor.

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