IPG16N10S4-61 - Power-Transistor
IPG16N10S4-61 Features
* Dual N-channel Normal Level - Enhancement mode
* AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON
