IPP65R190C6 Key Features
- Extremely low losses due to very low FOM Rdson-Qg and Eoss
- Very high mutation ruggedness
- Easy to use/drive
- JEDEC1) qualified, Pb-free plating, Halogen free
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IPP65R190C6 | N-Channel MOSFET |