IPSH6N03LB OptiMOS2 Power-Transistor

Infineon Technologies

Description

Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking * Qualified according to JEDEC1) for target applications * N-.

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Datasheet Specifications

Part number: IPSH6N03LB
Manufacturer: Infineon ↗ Technologies
File Size: 334.60 KB
Datasheet: IPSH6N03LB_InfineonTechnologies.pdf
Description: OptiMOS2 Power-Transistor

Applications

* N-channel - Logic level
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB

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IPSH6N03LB OptiMOS2 Power-Transistor Infineon Technologies

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