IPSH6N03LB - OptiMOS2 Power-Transistor
Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB M
