IPW50R199CP
Infineon ↗ Technologies
647.30kb
Power transistor.
TAGS
📁 Related Datasheet
IPW50R199CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW50R199CP IIPW50R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤199mΩ ·Enhance.
IPW50R190CE - MOSFET
(Infineon)
IPW50R190CE, IPP50R190CE
MOSFET
500V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
IPW50R190CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to.
IPW50R140CP - Power Transistor
(Infineon Technologies)
CoolMOSTM Power Transistor
Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated.
IPW50R140CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.14Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to.
IPW50R250CP - Power Transistor
(Infineon)
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.
IPW50R250CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW50R250CP IIPW50R250CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤250mΩ ·Enhance.
IPW50R280CE - MOSFET
(Infineon)
IPW50R280CE, IPP50R280CE
MOSFET
500V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
IPW50R280CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW50R280CE IIPW50R280CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.28Ω ·Enhance.
IPW50R299CP - Power-Transistor
(Infineon Technologies)
9?E,'@)004?
4VVS=>AB= # : A 0<& <,9 =4=>: <
7LHZ[XLY W*EM;IJ7H=; W# NJH;C ; : L
: JH7J;:
# <: /?.>% ?8.
