K30T60 - IKW30N60T

Datasheet Summary

Features

Very low VCE(sat) 1.5V (typ. ).
Maximum Junction Temperature 175°C.
Short circuit withstand time 5s.
Designed for : - Frequency Converters - Uninterruptible Power Supply.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	K30T60
Manufacturer	Infineon Technologies
File Size	502.78 KB
Description	IKW30N60T
Datasheet	K30T60 Datasheet
Additional preview pages of the K30T60 datasheet.

📁 Similar Datasheet

K300 - Silicon Zener Diodes (Aeroflex)
K300 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)
K3003 - 2SK3003 (Sanken)
K3004 - 2SK3004 (ETC)
K300zy - Thyristors (Littelfuse)
K301 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
K3010 - 4PIN PHOTOTRANSISTOR (Cosmo)
K30101X - 4PIN PHOTOTRANSISTOR (Cosmo)
K30102X - 4PIN PHOTOTRANSISTOR (Cosmo)
K30103X - 4PIN PHOTOTRANSISTOR (Cosmo)

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text

IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.5V (typ.

Published: Oct 5, 2014 |