SGW50N60HS
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High Speed IGBT in NPT-technology
- 30% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for operation above 30 k Hz
- NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
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- - High ruggedness, temperature stable behaviour Pb-free lead plating; Ro HS pliant 1 Qualified according to JEDEC for target applications plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21
PG-TO-247-3-21
Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
0.88m J 150°C G50N60HS Symbol VCE IC
Value 600 100 50
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static...
