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SIGC81T120R2C IGBT

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Description

www.DataSheet4U.com SIGC81T120R2C IGBT Chip in NPT-technology .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

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Features

* 1200V NPT technology 200µm chip
* low turn-off losses
* positive temperature coefficient
* easy paralleling
* integrated gate resistor This chip is used for:

Applications

* drives C G E Chip Type SIGC81T120R2C VCE 1200V ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafe

SIGC81T120R2C Distributors

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