SPW07N60CFD Datasheet, power-transistor equivalent, Infineon Technologies

PDF File Details

Part number: SPW07N60CFD

Manufacturer: Infineon (https://www.infineon.com/) Technologies

File Size: 664.47KB

Download: 📄 Datasheet

Description: Power-Transistor

Datasheet Preview: SPW07N60CFD 📥 Download PDF (664.47KB)

Image gallery

Page 2 of SPW07N60CFD Page 3 of SPW07N60CFD

TAGS

SPW07N60CFD
Power-Transistor
Infineon Technologies

📁 Related Datasheet

SPW-TKP80E - Heaven Tsukatachi kitchen (Sanyo)
.

SPW11N60C2 - Cool MOS Power Transistor (Infineon Technologies)
Final data SPW11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche ra.

SPW11N60C3 - Cool MOS Power Transistor (Infineon Technologies)
Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ul.

SPW11N60C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme.

SPW11N60CFD - Cool MOS Power Transistor (Infineon Technologies)
SPW11N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extrem.

SPW11N60CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60CFD ISPW11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤440mΩ ·Enhance.

SPW11N60S5 - Cool MOS Power Transistor (Infineon Technologies)
SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme.

SPW11N60S5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme.

SPW11N80C3 - Cool MOS Power Transistor (Infineon Technologies)
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.

SPW11N80C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhanceme.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts