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111N15N Power-Transistor

111N15N Description

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor .

111N15N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free

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Power-Transistor Infineon
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