120M1045 - 1200V SiC Trench MOSFET

Datasheet Summary

Features

Very low switching losses.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Easy to use/drive due to sense (driver) source pin for better control of the gate.
Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 B.

Infineon

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Datasheet Details

Part number	120M1045
Manufacturer	Infineon
File Size	1.45 MB
Description	1200V SiC Trench MOSFET
Datasheet	120M1045 Datasheet
Additional preview pages of the 120M1045 datasheet.

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.

Published: Aug 14, 2021 |