170M1450 Datasheet, Mosfet, Infineon

✔ 170M1450 Features

VDSS = 1700 V at Tvj = 25°C
IDDC = 10 A at TC = 25°C
RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C
Optimized for fly-back topologies
12 V / 0 V gate-source voltage

✔ 170M1450 Application

General purpose drives (GPD)
EV-Charging
Energy Storage Systems (ESS)
String inverter
Uninterrupti

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170M1450

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📄 Datasheet

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170M1450 Silicon Carbide MOSFET Infineon