1EDI10I12MH - Single channel IGBT gate driver

Infineon

1EDI10I12MH Datasheet Preview — Preview of 1EDI10I12MH PDF

Datasheet Details

Part number	1EDI10I12MH
Manufacturer	Infineon ↗
File Size	501.59 KB
Description	Single channel IGBT gate driver
Datasheet	1EDI10I12MH-Infineon.pdf

1EDI10I12MH Product details

Description

Description The 1EDIxxI12MH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59 package that provide output currents up to 3 A and an integrated active Miller clamp circuit with the same current rating to protect against parasitic turn on.The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels to support even 3.3 V microcontrollers.Data transfer across the isolation barrier is realized by the coreless transformer technolo

Features

Single channel isolated gate driver.
For 600 V/650 V/1200 V IGBTs, MOSFETs, and SiC MOSFETs.
Up to 6 A typical peak current at rail-to-rail output.
Active Miller clamp.
Galvanically isolated coreless transformer driver.
Wide input voltage operating range.
Suitable for operation at high ambient temperature and in fast switching.

📁 1EDI10I12MH Similar Datasheet

Other Datasheets by Infineon

1EDI10I12MF - Single Channel IGBT Gate Driver
1EDI05I12AF - Single channel isolated gate driver
1EDI05I12AH - Single channel IGBT gate driver
1EDI2001AS - High Voltage IGBT Driver
1EDI2002AS - High Voltage IGBT Driver
1EDI2004AS - High Voltage IGBT Driver

Published: Jun 16, 2020 |