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2ED2104S06F 650V half bridge gate driver

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Description

2ED2181 (4) S06F 2ED2104S06F 650 V half bridge gate driver with integrated bootstrap diode .
The 2ED2104S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels.

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Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient voltage immunity of -100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) up to + 650 V
* Maximum bootstrap voltage (VB node) of + 675

Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
* Refrigeration compressors, induction cookers, ot

2ED2104S06F Distributors

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