2ED2106S06F Datasheet - Infineon

2ED2106S06F 650V high-side and low-side gate driver

Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative.

2ED2106S06F Features

* Product summary

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

* Int

2ED2106S06F-Infineon.pdf