2ED2106S06F Datasheet - Infineon

2ED2106S06F, 650V high-side and low-side gate driver

2ED2106 (4) S06F (J) 2ED2106 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap diode .
Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output chan.

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Datasheet Details

Part number:

2ED2106S06F

Manufacturer:

Infineon ↗

File Size:

1.09 MB

Description:

650V high-side and low-side gate driver

Features

* Product summary
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Int

Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules or its equivalent power stages
* Refrigeration compressors

2ED2106S06F Distributors

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2ED2106S06F 650V high-side and low-side gate driver Infineon

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