2ED2108S06F
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to
- 11 V on VS Pin
- Negative voltage tolerance on inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Dual package options of DSO-8 and DSO-14
- High and low voltage pins separated for maximum creepage and clearance (2ED21084S06J version)
- Separate logic and power ground with the 2ED21084S06J version
- Interlocking function with internal 540 ns dead time and programmable up to 5 us with external resistor (2ED21084S06J only)
- Ro HS pliant
Product summary
VS_OFFSET = 650 V max. Io+pk / Io-pk (typ.) = + 0.29 A/
- 0.7...
