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2ED2108S06F - 650V half bridge gate driver

Infineon

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Datasheet Details

Part number	2ED2108S06F
Manufacturer	Infineon ↗
File Size	1.32 MB
Description	650V half bridge gate driver
Datasheet	2ED2108S06F-Infineon.pdf

2ED2108S06F Product details

Description

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lockout for both chann.

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Published: Apr 13, 2020 |